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dc.contributor.authorWu, Chien-Hungen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorChen, Yi-Mingen_US
dc.contributor.authorZhang, Yu-Xinen_US
dc.contributor.authorCheng, Chia-Yaoen_US
dc.date.accessioned2019-04-02T05:58:14Z-
dc.date.available2019-04-02T05:58:14Z-
dc.date.issued2019-04-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2019.15996en_US
dc.identifier.urihttp://hdl.handle.net/11536/148539-
dc.description.abstractAmorphous oxide semiconductors (AOSs) are attracted much attention due to high mobility, low temperature deposition, flexible, transmission, and uniformity. The thin film transistors (TFTs) with a-IGZO thin film as active layer perform higher field-effect mobility (>10 cm(2)/V . S), larger I-on/I-off ratio (>10(6)), smaller subthreshold swing and better stability against electrical stress. LaAlO3/ZrO2 is employed as gate electrode and gate dielectric layer for a-IGZO TFTs, under the premise that performance of a-IGZO TFTs without decreasing. Due to the good selectivity of energy transformation and rapid heating rate, microwave annealing is applied to improve the device reliability in the investigation. With adjusting the parameter of microwave annealing, the effect on reliability characteristics of a-IGZO TFTs is studied.en_US
dc.language.isoen_USen_US
dc.subjectIGZO TFTsen_US
dc.subjectMicrowave Annealingen_US
dc.subjectStretched-Exponential Modelen_US
dc.subjectPositive Bias Stressen_US
dc.titleThe Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2019.15996en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume19en_US
dc.citation.spage2189en_US
dc.citation.epage2192en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000451787200038en_US
dc.citation.woscount0en_US
Appears in Collections:Articles