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dc.contributor.authorWu, Chien-Hungen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorChen, Yi-Mingen_US
dc.contributor.authorZhang, Yu-Xinen_US
dc.contributor.authorTan, Yu-Hsuanen_US
dc.date.accessioned2019-04-02T05:58:14Z-
dc.date.available2019-04-02T05:58:14Z-
dc.date.issued2019-04-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2019.15995en_US
dc.identifier.urihttp://hdl.handle.net/11536/148541-
dc.description.abstractTFT panel production process can be divided into three kinds of technology. There have amorphous silicon (a-Si), low-temperature polysilicon (LTPS) and amorphous IGZO (a-IGZO) oxide. Traditional amorphous silicon (a-Si) silicon has a lot of advantages such as good productivity, short process and low-cost. It also has a lot of shortcomings on these applications on TFTs such as photosensitivity, light degradation, and opacity, etc. The dispute of the material based on a-Si: H as an active layer in TFT is low field effect mobility (similar to 1 cm(2)/V.S) (M. Shur and M. Hack, J. Appl. Phys. 55, 3831 (1984)), photo sensitivity (low band gap about 1.7 V) and high deposition temperature (similar to 400 degrees C) (M. Shur, et al., J. Appl. Phys. 66, 3371 (1989); K. khakzar and E. H. Lueder, IEEE Trans. Electron Devices 39, 1438 (1992)). Amorphous In-Ga-Zn-O (IGZO) had attracted attention that compared with the conventional a-Si: H, in the past three years, a-IGZO thin film transistors is more popular which compared with the other oxide semiconductors, because of its larger I-on/I-off ratio (> 10(6)), smaller subthreshold swing (SS), better field-effect mobility and better stability against electrical stress. Hydrogen plasma treatment is applied in improving a-IGZO TFTs active layer, which is fabricated by atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD), the electrical characteristics of a-IGZO TFTs is investigated.en_US
dc.language.isoen_USen_US
dc.subjecta-IGZO TFTsen_US
dc.subjectAP-PECVDen_US
dc.subjectActive Layeren_US
dc.subjectHydrogen Plasma Treatmenten_US
dc.titleInvestigation of Electrical Characteristics on AP-PECVD Fabricated Amorphous IGZO TFTs with Hydrogen Plasma Treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2019.15995en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume19en_US
dc.citation.spage2306en_US
dc.citation.epage2309en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000451787200061en_US
dc.citation.woscount0en_US
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