完整後設資料紀錄
DC 欄位語言
dc.contributor.authorTu, RCen_US
dc.contributor.authorChuo, CCen_US
dc.contributor.authorPan, SMen_US
dc.contributor.authorFan, YMen_US
dc.contributor.authorTsai, CEen_US
dc.contributor.authorWang, TCen_US
dc.contributor.authorTun, CJen_US
dc.contributor.authorChi, GCen_US
dc.contributor.authorLee, BCen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2019-04-02T05:58:51Z-
dc.date.available2019-04-02T05:58:51Z-
dc.date.issued2003-10-27en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1622441en_US
dc.identifier.urihttp://hdl.handle.net/11536/148590-
dc.description.abstractNear-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiNx interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epitaxy. Inserting the SiNx interlayer into the n-GaN underlying layer slightly reduced leakage current induced by reducing the defect density. Additionally, an enhancement of light extraction for the LED with a SiNx interlayer is expected because of the increased intensity of light scattered on the SiNx nanomask, changing the directions of propagation of light. Consequently, the emission efficiency of an LED with an in situ rough SiNx interlayer doubles that without a SiNx interlayer. (C) 2003 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleImprovement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1622441en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume83en_US
dc.citation.spage3608en_US
dc.citation.epage3610en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000186068400055en_US
dc.citation.woscount19en_US
顯示於類別:期刊論文