完整後設資料紀錄
DC 欄位語言
dc.contributor.authorPhuoc Huu Leen_US
dc.contributor.authorLe Trung Hieuen_US
dc.contributor.authorTu-Ngoc Lamen_US
dc.contributor.authorNguyen Thi Nhat Hangen_US
dc.contributor.authorNguyen Van Truongen_US
dc.contributor.authorLe Thi Cam Tuyenen_US
dc.contributor.authorPham Thanh Phongen_US
dc.contributor.authorLeu, Jihperngen_US
dc.date.accessioned2019-04-02T06:00:59Z-
dc.date.available2019-04-02T06:00:59Z-
dc.date.issued2018-12-01en_US
dc.identifier.issn2072-666Xen_US
dc.identifier.urihttp://dx.doi.org/10.3390/mi9120618en_US
dc.identifier.urihttp://hdl.handle.net/11536/148678-
dc.description.abstractNitrogen-doped TiO2 nanotube arrays (N-TNAs) were successfully fabricated by a simple thermal annealing process in ambient N-2 gas at 450 degrees C for 3 h. TNAs with modified morphologies were prepared by a two-step anodization using an aqueous NH4F/ethylene glycol solution. The N-doping concentration (0-9.47 at %) can be varied by controlling N-2 gas flow rates between 0 and 500 cc/min during the annealing process. Photocatalytic performance of as-prepared TNAs and N-TNAs was studied by monitoring the methylene blue degradation under visible light ( 400 nm) illumination at 120 mWcm(-2). N-TNAs exhibited appreciably enhanced photocatalytic activity as compared to TNAs. The reaction rate constant for N-TNAs (9.47 at % N) reached 0.26 h(-1), which was a 125% improvement over that of TNAs (0.115 h(-1)). The significant enhanced photocatalytic activity of N-TNAs over TNAs is attributed to the synergistic effects of (1) a reduced band gap associated with the introduction of N-doping states to serve as carrier reservoir, and (2) a reduced electronhole recombination rate.en_US
dc.language.isoen_USen_US
dc.subjectN-doped TNAsen_US
dc.subjecttwo-step anodizationen_US
dc.subjectphotocatalytic activityen_US
dc.subjectthermal annealingen_US
dc.subjectmodified TiO2en_US
dc.subjectband gapen_US
dc.titleEnhanced Photocatalytic Performance of Nitrogen-Doped TiO2 Nanotube Arrays Using a Simple Annealing Processen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/mi9120618en_US
dc.identifier.journalMICROMACHINESen_US
dc.citation.volume9en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000455072800009en_US
dc.citation.woscount0en_US
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