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dc.contributor.authorChen, Tsung-Chengen_US
dc.contributor.authorKuo, Ting-Weien_US
dc.contributor.authorLin, Yu-Lingen_US
dc.contributor.authorKu, Chen-Haoen_US
dc.contributor.authorYang, Zu-Poen_US
dc.contributor.authorYu, Ing-Songen_US
dc.date.accessioned2019-04-02T06:01:02Z-
dc.date.available2019-04-02T06:01:02Z-
dc.date.issued2018-12-01en_US
dc.identifier.issn2079-6412en_US
dc.identifier.urihttp://dx.doi.org/10.3390/coatings8120418en_US
dc.identifier.urihttp://hdl.handle.net/11536/148695-
dc.description.abstractThe issue of potential-induced degradation (PID) has gained more concerns due to causing the catastrophic failures in photovoltaic (PV) modules. One of the approaches to diminish PID is to modify the anti-reflection coating (ARC) layer upon the front surface of crystalline silicon solar cells. Here, we focus on the modification of ARC films to realize PID-free step-by-step through three delicate experiments. Firstly, the ARC films deposited by direct plasma enhanced chemical vapor deposition (PECVD) and by indirect PECVD were investigated. The results showed that the efficiency degradation of solar cells by indirect PECVD method is up to -33.82%, which is out of the IEC 62804 standard and is significantly more severe than by the direct PECVD method (-0.82%). Next, the performance of PID-resist for the solar cell via indirect PECVD was improved significantly (PID reduced from -31.82% to -2.79%) by a pre-oxidation step, which not only meets the standard but also has higher throughput than direct PECVD. Lastly, we applied a novel PECVD technology, called the pulsed-plasma (PP) PECVD method, to deal with the PID issue. The results of the HF-etching rate test and FTIR measurement indicated the films deposited by PP PECVD have higher potential against PID in consideration of less oxygen content in this film. That demonstrated the film properties were changed by applied a new control of freedom, i.e., PP method. In addition, the 96 h PID result of the integrated PP method was only -2.07%, which was comparable to that of the integrated traditional CF method. In summary, we proposed three effective or potential approaches to eliminate the PID issue, and all approaches satisfied the IEC 62804 standard of less than 5% power loss in PV modules.en_US
dc.language.isoen_USen_US
dc.subjectanti-reflection coatingen_US
dc.subjectpotential-induced degradationen_US
dc.subjectsolar cellen_US
dc.subjectplasma enhanced chemical vapor depositionen_US
dc.titleEnhancement for Potential-Induced Degradation Resistance of Crystalline Silicon Solar Cells via Anti-Reflection Coating by Industrial PECVD Methodsen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/coatings8120418en_US
dc.identifier.journalCOATINGSen_US
dc.citation.volume8en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.identifier.wosnumberWOS:000455200300004en_US
dc.citation.woscount0en_US
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