Full metadata record
DC FieldValueLanguage
dc.contributor.authorChen, Po-Chunen_US
dc.contributor.authorLin, Chih-Pinen_US
dc.contributor.authorHong, Chuan-Jieen_US
dc.contributor.authorYang, Chih-Haoen_US
dc.contributor.authorLin, Yun-Yanen_US
dc.contributor.authorLi, Ming-Yangen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.contributor.authorYu, Tung-Yuanen_US
dc.contributor.authorSu, Chun-Jungen_US
dc.contributor.authorLi, Kai-Shinen_US
dc.contributor.authorZhong, Yuan-Liangen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.contributor.authorLan, Yann-Wenen_US
dc.date.accessioned2019-04-02T06:01:05Z-
dc.date.available2019-04-02T06:01:05Z-
dc.date.issued2019-02-01en_US
dc.identifier.issn1998-0124en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s12274-018-2215-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/148709-
dc.description.abstractTwo-dimensional semiconductors, such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication, which could adversely affect device performance. To ensure high device yield, uniformity and performance, the semiconductor industry has long employed wet chemical cleaning strategies to remove undesirable surface contaminations, adsorbates, and native oxides from the surface of Si wafers. A similarly effective surface cleaning technique for two-dimensional materials has not yet been fully developed. In this study, we propose a wet chemical cleaning strategy for MoS2 by using N-methyl-2-pyrrolidone. The cleaning process not only preserves the intrinsic properties of monolayer MoS2, but also significantly improves the performance of monolayer MoS2 field-effect-transistors. Superior device on current of 12 Am-1 for a channel length of 400 nm, contact resistance of 15 k<bold>m</bold>, field-effect mobility of 15.5 cm(2)V(-1)s(-1), and the average on-off current ratio of 10(8) were successfully demonstrateden_US
dc.language.isoen_USen_US
dc.subjectmonolayer MoS2 devicesen_US
dc.subjectstandard wet cleaningen_US
dc.subjectfield-effect transistorsen_US
dc.subjectN-methyl-2-pyrrolidoneen_US
dc.titleEffective N-methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS2 transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s12274-018-2215-5en_US
dc.identifier.journalNANO RESEARCHen_US
dc.citation.volume12en_US
dc.citation.spage303en_US
dc.citation.epage308en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000455549200008en_US
dc.citation.woscount0en_US
Appears in Collections:Articles