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dc.contributor.authorTan, Kok Hongen_US
dc.contributor.authorChen, Yun-Wenen_US
dc.contributor.authorChien Nguyen Vanen_US
dc.contributor.authorWang, Hongliangen_US
dc.contributor.authorChen, Jhih-Weien_US
dc.contributor.authorLim, Fang Shengen_US
dc.contributor.authorChew, Khian-Hooien_US
dc.contributor.authorZhan, Qianen_US
dc.contributor.authorWu, Chung-Linen_US
dc.contributor.authorChai, Siang-Piaoen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorChang, Wei Seaen_US
dc.date.accessioned2019-04-02T06:01:05Z-
dc.date.available2019-04-02T06:01:05Z-
dc.date.issued2019-01-09en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.8b17758en_US
dc.identifier.urihttp://hdl.handle.net/11536/148711-
dc.description.abstractThe ability of band offsets at multiferroic/metal and multiferroic/electrolyte interfaces in controlling charge transfer and thus altering the photoactivity performance has sparked significant attention in solar energy conversion applications. Here, we demonstrate that the band offsets of the two interfaces play the key role in determining charge transport direction in a downward self-polarized BFO film. Electrons tend to move to BFO/electrolyte interface for water reduction. Our experimental and first-principle calculations reveal that the presence of neodymium (Nd) dopants in BFO enhances the photoelectrochemical performance by reduction of the local electron hole pair recombination sites and modulation of the band gap to improve the visible light absorption. This opens a promising route to the heterostructure design by modulating the band gap to promote efficient charge transfer.en_US
dc.language.isoen_USen_US
dc.subjectheterojunction band offsetsen_US
dc.subjectcharge transferen_US
dc.subjectNd-doped BiFeO3en_US
dc.subjectdensity functional theory (DFT)en_US
dc.subjectphotoelectrochemical (PEC)en_US
dc.titleEnergy Band Gap Modulation in Nd-Doped BiFeO3/SrRuO3 Heteroepitaxy for Visible Light Photoelectrochemical Activityen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsami.8b17758en_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.volume11en_US
dc.citation.spage1655en_US
dc.citation.epage1664en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000455561200179en_US
dc.citation.woscount0en_US
Appears in Collections:Articles