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dc.contributor.authorKou, Jianquanen_US
dc.contributor.authorChen, Sung-Wen Huangen_US
dc.contributor.authorChe, Jiamangen_US
dc.contributor.authorShao, Huaen_US
dc.contributor.authorChu, Chunshuangen_US
dc.contributor.authorTian, Kangkaien_US
dc.contributor.authorZhang, Yonghuien_US
dc.contributor.authorBi, Wengangen_US
dc.contributor.authorZhang, Zi-Huien_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2019-04-02T06:01:08Z-
dc.date.available2019-04-02T06:01:08Z-
dc.date.issued2019-01-01en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNANO.2018.2879817en_US
dc.identifier.urihttp://hdl.handle.net/11536/148717-
dc.description.abstractIn this paper, we model and investigate the carrier transport for the core-shell nanorod (NR) structured green light-emitting diodes (LEDs) for which the InGaN/GaN multiple quantum wells are grown on the nonpolar surface of the NR. Our results show the absence of polarization fields in the m-plane quantum wells for the core-shell NR LEDs, which manifest the flat energy band condition, the improved electron injection efficiency, and the high electron-hole wave functions overlap for the quantum wells, leading to the high radiative recombination rate and the enhanced quantum efficiency. We further find that the quantum efficiency is also affected by the vertical charge injection for the core-shell NR LEDs. The vertical charge injection is more sensitive to the doping concentration and the thickness of the p-GaN layer than of the n-GaN layer. Moreover, the increase of the NR height also leads to the nonuniform vertical charge injection.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectnanorod light-emitting diodes (NR LEDs)en_US
dc.subjectcharge transporten_US
dc.subjectvertical charge injectionen_US
dc.subjectexternal quantum efficiency (EQE)en_US
dc.titleOn the Carrier Transport for InGaN/GaN Core-Shell Nanorod Green Light-Emitting Diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TNANO.2018.2879817en_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOTECHNOLOGYen_US
dc.citation.volume18en_US
dc.citation.spage176en_US
dc.citation.epage182en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000455709300021en_US
dc.citation.woscount0en_US
Appears in Collections:Articles