完整後設資料紀錄
DC 欄位語言
dc.contributor.authorJiang, Jieen_US
dc.contributor.authorYang, Qiongen_US
dc.contributor.authorZhang, Yien_US
dc.contributor.authorLi, Xiao-Yuen_US
dc.contributor.authorShao, Pao-Wenen_US
dc.contributor.authorHsieh, Ying-Huien_US
dc.contributor.authorLiu, Heng-Juien_US
dc.contributor.authorPeng, Qiang-Xiangen_US
dc.contributor.authorZhong, Gao-Kuoen_US
dc.contributor.authorPan, Xiao-Qingen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorZhou, Yi-Chunen_US
dc.date.accessioned2019-04-02T06:00:47Z-
dc.date.available2019-04-02T06:00:47Z-
dc.date.issued2019-01-16en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.8b14775en_US
dc.identifier.urihttp://hdl.handle.net/11536/148743-
dc.description.abstractSelf-assembled heteroepitaxial nanostructures have played an important role for miniaturization of electronic devices, e.g., the ultrahigh density ferroelectric memories, and cause for great concern. Our first principle calculations predict that the materials with low formation energy of the interface (E-f) tend to form matrix structure in self-assembled heteroepitaxial nanostructures, whereas those with high E-f form nanopillars. Under the guidance of the theoretical modeling, perovskite BiFeO3 (BFO) nanopillars are swimmingly grown into CeO2 matrix on single-crystal (001)-SrTiO3 (STO) substrates by pulsed laser deposition, where CeO2 has a lower formation energy of the interface (E-f) than BFO. This work provides a good paradigm for controlling self-ssembled nanostructures as well as the application of self-assembled ferroelectric nanoscale memory.en_US
dc.language.isoen_USen_US
dc.subjectformation energy of the interfaceen_US
dc.subjectself-assemblyen_US
dc.subjectCeO2-BFOen_US
dc.subjectferroelectric arrayen_US
dc.subjectferroelectric propertiesen_US
dc.titleSelf-Assembled Ferroelectric Nanoarrayen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsami.8b14775en_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.volume11en_US
dc.citation.spage2205en_US
dc.citation.epage2210en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000456351100051en_US
dc.citation.woscount0en_US
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