標題: | Facet-Dependent Photocatalytic Behaviors of ZnS-Decorated Cu2O Polyhedra Arising from Tunable Interfacial Band Alignment |
作者: | Naresh, Gollapally Hsieh, Pei-Lun Meena, Vandana Lee, Shih-Kuang Chiu, Yi-Hsuan Madasu, Mahesh Lee, An-Ting Tsai, Hsin-Yi Lai, Ting-Hsuan Hsu, Yung-Jung Lo, Yu-Chieh Huang, Michael H. 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | band alignment;cuprous oxide;facet-dependent properties;heterojunctions;interfacial charge transfer;zinc sulfide |
公開日期: | 23-Jan-2019 |
摘要: | ZnS particles were grown over Cu2O cubes, octahedra, and rhombic dodecahedra for examination of their facet-dependent photocatalytic behaviors. After ZnS growth, Cu2O cubes stay photocatalytically inactive. ZnS-decorated Cu2O octahedra show enhanced photocatalytic activity, resulting from better charge carrier separation upon photo excitation. Surprisingly, Cu2O rhombic dodecahedra give greatly suppressed photocatalytic activity after ZnS deposition. Electron paramagnetic resonance spectra agree with these experimental observations. Time-resolved photoluminescence profiles provide charge-transfer insights. The decrease in the photocatalytic activity is attributed to an unfavorable band alignment caused by significant band bending within the Cu2O(110)/ZnS(200) plane interface. A modified Cu2O-ZnS band diagram is presented. Density functional theory calculations generating plane -specific band energy diagrams of Cu2O and ZnS match well with the experimental results, showing that charge transfer across the Cu2O(110)/ZnS(200) plane interface would not happen. This example further illustrates that the actual photocatalysis outcome for semiconductor heterojunctions cannot be assumed because interfacial charge transfer is strongly facet-dependent. |
URI: | http://dx.doi.org/10.1021/acsami.8b19197 http://hdl.handle.net/11536/148785 |
ISSN: | 1944-8244 |
DOI: | 10.1021/acsami.8b19197 |
期刊: | ACS APPLIED MATERIALS & INTERFACES |
Volume: | 11 |
起始頁: | 3582 |
結束頁: | 3589 |
Appears in Collections: | Articles |