標題: | An Offset Readout Current Sensing Scheme for One-Resistor RRAM-Based Cross-Point Array |
作者: | Chen, You-Da Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Nonvolatile;resistive random access memory (RRAM);cross-point array;sneak current;current sensing |
公開日期: | 1-二月-2019 |
摘要: | The uneven sneak-path currents in resistive random access memory (RRAM) severely constrain the array size. To overcome this issue, we propose an innovative readout scheme that can fully offset the sneak-path currents in one-resistor (1R) RRAM array. Furthermore, the bit cell resistance (R-cell) in an RRAM array can be simply evaluated as the ratio of read voltage (V-read) to the sensed offset current (I-offset). Even under extreme device distribution, a 512x512 array size is still obtained. This is the largest array among simple 1R RRAM, without using a selector device or extra transistor. |
URI: | http://dx.doi.org/10.1109/LED.2018.2886552 http://hdl.handle.net/11536/148817 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2018.2886552 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 40 |
起始頁: | 208 |
結束頁: | 211 |
顯示於類別: | 期刊論文 |