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dc.contributor.authorLu, Shao-Yungen_US
dc.contributor.authorLiao, Yu-Teen_US
dc.date.accessioned2019-04-02T06:00:30Z-
dc.date.available2019-04-02T06:00:30Z-
dc.date.issued2019-02-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSSC.2018.2877927en_US
dc.identifier.urihttp://hdl.handle.net/11536/148829-
dc.description.abstractThis paper presents a fully integrated, 8.2-MHz relaxation oscillator with a self-threshold-tracking loop and swing-boosting technique for improving its long-term frequency stability and noise performance. The proposed latch-based relaxation oscillator increases the transition speed to reduce the static power consumption. To decrease the process-voltagetemperature dependence, we propose a self-threshold-tracking loop to ensure that the transition point of the inverter-based comparator is set to a fixed ratio of the supply voltage. In addition, the comparator delay can be compensated by the tracking loop, relaxing the requirements of comparator power consumption. The design is implemented in a 0.18-mu m CMOS process. The design achieves a period jitter of 7.66 psrms, the phase noise of -109 dBc/Hz at an offset frequency of 100 kHz, and an Allan deviation noise floor of 1.56 ppm. The resultant figure of merit is 160.8 dBc/Hz, while only consuming 46.3 mu W. The power efficiency of the design is 5.6 kHz/nW. As for the supply sensitivity, the design achieves 0.9 %/0.1 V, which is 10x lower than the design with no compensation loop. The measured temperature coefficient of the proposed oscillators is 123 ppm/degrees C from -20 degrees C to 100 degrees C without any trimming process.en_US
dc.language.isoen_USen_US
dc.subjectCMOSen_US
dc.subjectlow poweren_US
dc.subjectrelaxation oscillatoren_US
dc.subjectself-threshold-tracking loopen_US
dc.subjectswing boostingen_US
dc.titleA Low-Power, Differential Relaxation Oscillator With the Self-Threshold-Tracking and Swing-Boosting Techniques in 0.18-mu m CMOSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSSC.2018.2877927en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume54en_US
dc.citation.spage392en_US
dc.citation.epage402en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000457824800007en_US
dc.citation.woscount0en_US
Appears in Collections:Articles