Full metadata record
DC FieldValueLanguage
dc.contributor.authorRamirez, Hanz Y.en_US
dc.contributor.authorChou, Ying-Linen_US
dc.contributor.authorCheng, Shun-Jenen_US
dc.date.accessioned2019-04-02T06:00:25Z-
dc.date.available2019-04-02T06:00:25Z-
dc.date.issued2019-02-07en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41598-018-38044-xen_US
dc.identifier.urihttp://hdl.handle.net/11536/148834-
dc.description.abstractEntangled photon pair generation is a crucial task for development of quantum information based technologies, and production of entangled pairs by biexciton cascade decays in semiconductor quantum dots is so far one of the most advanced techniques to achieve it. However, its scalability toward massive implementation requires further understanding and better tuning mechanisms to suppress the fine structure splitting between polarized exciton states, which persists as a major obstacle for entanglement generation from most quantum dot samples. In this work, the influence of electrostatic environment arising from electrically biased electrodes and/or charged impurities on the fine structure splitting of GaAs/AlGaAs droplet epitaxial quantum dots is studied, by means of numerical simulations considering a realistic quantum dot confining potential and electron-hole exchange interaction within a multiband k.p framework. We find that reduction of the fine structure splitting can be substantially optimized by tilting the field and seeding impurities along the droplet elongation axis. Furthermore, our results provide evidence of how the presence of charged impurities and in-plane bias components, may account for different degrees of splitting manipulation in dots with similar shape, size and growth conditions.en_US
dc.language.isoen_USen_US
dc.titleEffects of electrostatic environment on the electrically triggered production of entangled photon pairs from droplet epitaxial quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-018-38044-xen_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume9en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000458017800015en_US
dc.citation.woscount0en_US
Appears in Collections:Articles