Full metadata record
DC FieldValueLanguage
dc.contributor.authorChen, Hsinen_US
dc.contributor.authorHuang, Chao-Jenen_US
dc.contributor.authorKuo, Chun-Chiehen_US
dc.contributor.authorLin, Li-Chien_US
dc.contributor.authorMa, Yu-Shengen_US
dc.contributor.authorYang, Wen-Hauen_US
dc.contributor.authorChen, Ke-Horngen_US
dc.contributor.authorLin, Ying-Hsien_US
dc.contributor.authorLin, Shian-Ruen_US
dc.contributor.authorTsai, Tsung-Yenen_US
dc.date.accessioned2019-04-02T06:00:27Z-
dc.date.available2019-04-02T06:00:27Z-
dc.date.issued2019-03-01en_US
dc.identifier.issn0885-8993en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TPEL.2018.2845124en_US
dc.identifier.urihttp://hdl.handle.net/11536/148845-
dc.description.abstractStacked MOSFET structures made of low-voltage devices suffer from degraded transient response or large footprint when a capacitorless or dominant-pole compensated low-dropout (LDO) regulator biases the driver. Due to the self-stabilizing nature, the proposed stacked MOSFET driver (SMD) technology effectively drives the power stage and greatly reduces the noise at the switching nodes for low cross regulation (CR) in a single-inductor dual-output (SIDO) converter. In addition, two inherent LDO regulators in SMD technology fully regulate the dual outputs with the advantage of low quiescent current at no-load conditions. The experimental results show that the test chip fabricated under the 0.25-mu m process has low CR of 0.015 mV/mA and ultralow quiescent current of 5 mu A under no-load conditions.en_US
dc.language.isoen_USen_US
dc.subjectCross regulation (CR)en_US
dc.subjectlow-dropout (LDO) regulatoren_US
dc.subjectsingle-inductor dual-output (SIDO) converteren_US
dc.subjectstacked MOSFET driver (SMD) technologyen_US
dc.subjectstacked MOSFET structuresen_US
dc.titleA Single-Inductor Dual-Output Converter With the Stacked MOSFET Driving Technique for Low Quiescent Current and Cross Regulationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TPEL.2018.2845124en_US
dc.identifier.journalIEEE TRANSACTIONS ON POWER ELECTRONICSen_US
dc.citation.volume34en_US
dc.citation.spage2758en_US
dc.citation.epage2770en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:000458179200067en_US
dc.citation.woscount0en_US
Appears in Collections:Articles