標題: | Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering |
作者: | Cheng, Chun-Hu Fan, Chia-Chi Hsu, Hsiao-Hsuan Wang, Shih-An Chang, Chun-Yen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | aluminum-doped hafnium oxide;ferroelectrics;fluorine passivation;negative capacitance |
公開日期: | 1-二月-2019 |
摘要: | A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec(-1) for symmetric switch, a wide sub-60 mV (dec center dot swing)(-1) range over 4 decades of drain current, an ultralow off-leakage current of 4 fA mu m(-1), and a high on/off current ratio of >10(8). The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation. |
URI: | http://dx.doi.org/10.1002/pssr.201800493 http://hdl.handle.net/11536/148854 |
ISSN: | 1862-6254 |
DOI: | 10.1002/pssr.201800493 |
期刊: | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS |
Volume: | 13 |
顯示於類別: | 期刊論文 |