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dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorFan, Chia-Chien_US
dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorWang, Shih-Anen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2019-04-02T06:00:27Z-
dc.date.available2019-04-02T06:00:27Z-
dc.date.issued2019-02-01en_US
dc.identifier.issn1862-6254en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssr.201800493en_US
dc.identifier.urihttp://hdl.handle.net/11536/148854-
dc.description.abstractA ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec(-1) for symmetric switch, a wide sub-60 mV (dec center dot swing)(-1) range over 4 decades of drain current, an ultralow off-leakage current of 4 fA mu m(-1), and a high on/off current ratio of >10(8). The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.en_US
dc.language.isoen_USen_US
dc.subjectaluminum-doped hafnium oxideen_US
dc.subjectferroelectricsen_US
dc.subjectfluorine passivationen_US
dc.subjectnegative capacitanceen_US
dc.titleImproved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineeringen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/pssr.201800493en_US
dc.identifier.journalPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERSen_US
dc.citation.volume13en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000458298200002en_US
dc.citation.woscount0en_US
Appears in Collections:Articles