標題: Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering
作者: Cheng, Chun-Hu
Fan, Chia-Chi
Hsu, Hsiao-Hsuan
Wang, Shih-An
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: aluminum-doped hafnium oxide;ferroelectrics;fluorine passivation;negative capacitance
公開日期: 1-Feb-2019
摘要: A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec(-1) for symmetric switch, a wide sub-60 mV (dec center dot swing)(-1) range over 4 decades of drain current, an ultralow off-leakage current of 4 fA mu m(-1), and a high on/off current ratio of >10(8). The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.
URI: http://dx.doi.org/10.1002/pssr.201800493
http://hdl.handle.net/11536/148854
ISSN: 1862-6254
DOI: 10.1002/pssr.201800493
期刊: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume: 13
Appears in Collections:Articles