完整後設資料紀錄
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dc.contributor.authorHuang, Pin-Rueien_US
dc.contributor.authorChen, You-Chengen_US
dc.contributor.authorKuo, Kuang-Yangen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.date.accessioned2019-04-02T05:58:15Z-
dc.date.available2019-04-02T05:58:15Z-
dc.date.issued2019-05-01en_US
dc.identifier.issn0927-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.solmat.2019.01.030en_US
dc.identifier.urihttp://hdl.handle.net/11536/148900-
dc.description.abstractBoron (B)-doped gradient Si-rich oxide multilayer (GSRO-ML) structure is utilized to realize super-high density Si quantum dots (QDs) thin films with large carrier tunneling probability by co-sputtering. The B-doping effect on crystalline, optical, electrical and photovoltaic (PV) properties of Si QD thin films is investigated in this study. With increased B-doping concentration, the preserved high crystallinity of Si QDs and the reduced optical bandgap are observed. An optimized doping condition is found for the electrical and PV properties. Further increasing the doping concentration leads to increased inactive B atoms and interfacial over-diffusion. The issue of interfacial over-diffusion can be efficiently improved by inserting lowly B-doped GSRO-ML thin films. Our results show the feasibility and great potential for high efficiency Si-based solar cells integrating Si QDs by properly doped B atoms in GSRO-ML thin film structure.en_US
dc.language.isoen_USen_US
dc.subjectBoron-doping effecten_US
dc.subjectSi quantum doten_US
dc.subjectGradient Si-rich oxideen_US
dc.subjectMultilayeren_US
dc.subjectSolar cellen_US
dc.titleBoron-doping effect on the super-high density Si quantum dot thin films utilizing a gradient Si-rich oxide multilayer structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.solmat.2019.01.030en_US
dc.identifier.journalSOLAR ENERGY MATERIALS AND SOLAR CELLSen_US
dc.citation.volume193en_US
dc.citation.spage287en_US
dc.citation.epage291en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000459358800031en_US
dc.citation.woscount0en_US
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