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dc.contributor.authorYang, Chan-Shanen_US
dc.contributor.authorKuo, Chunen_US
dc.contributor.authorChen, Po-Hanen_US
dc.contributor.authorWu, Wei-Taen_US
dc.contributor.authorPan, Ru-Pinen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorPan, Ci-Lingen_US
dc.date.accessioned2019-04-02T05:58:13Z-
dc.date.available2019-04-02T05:58:13Z-
dc.date.issued2019-01-02en_US
dc.identifier.issn2076-3417en_US
dc.identifier.urihttp://dx.doi.org/10.3390/app9020271en_US
dc.identifier.urihttp://hdl.handle.net/11536/148905-
dc.description.abstractWe have investigated tunable terahertz (THz) phase shifters that are based on a sandwiched liquid crystal (LC) cell with indium-tin-oxide (ITO) nanowhiskers (NWhs) as transparent electrodes. More than 360 degrees of phase shift at 1.0 THz was achieved at a driving voltage as low as similar to 2.6 V (rms). This is approximately 40 times smaller than that reported in previous works using an electrically tuned LC device. Significance of the NWhs in reducing the required voltage is demonstrated. Overall transmittance of the device is as high as 30%, which is accountable by absorption losses of ITO NWhs, quartz substrate and LC. Experimental results are in good agreement with a theoretical formulism while taking into account super-thick LC cells (similar to 1 mm) and pretilt angles. We also propose and demonstrate a novel THz technique for measuring pretilt angles of liquid crystals.en_US
dc.language.isoen_USen_US
dc.subjectfar infrareden_US
dc.subjectnanomaterialsen_US
dc.subjectterahertzen_US
dc.subjecttransparent conductive coatingsen_US
dc.subjectphase shiften_US
dc.subjectliquid crystalsen_US
dc.subjectbirefringenceen_US
dc.subjectantireflection coatingsen_US
dc.titleHigh-Transmittance 2 Electrically Tunable Terahertz Phase Shifter with CMOS-Compatible Driving Voltage Enabled by Liquid Crystalsen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/app9020271en_US
dc.identifier.journalAPPLIED SCIENCES-BASELen_US
dc.citation.volume9en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000459436300061en_US
dc.citation.woscount1en_US
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