| 標題: | Atomistic view of the recombinative desorption of H-2 from H/Si(100) |
| 作者: | Ferng, SS Lin, CT Yang, KM Lin, DS Chiang, TC 物理研究所 Institute of Physics |
| 公開日期: | 20-五月-2005 |
| 摘要: | Scanning tunneling microscopy is employed to investigate the recombinative desorption of H-2 from hydrogenated Si(100) surfaces consisting of dihydride (SiH2) and monohydride (SiH) surface species organized in (1x1), (3x1), and (2x1) configurations. The results show that desorption from dihydrides involves a pair of neighboring dihydrides linked along the tetrahedral bond direction. Dihydrides in (3x1) domains are separated in the same direction by monohydrides, and desorption from a pair is geometrically impossible. The same desorption mechanism nevertheless applies via first a position switching of dihydrides with neighboring monohydrides. |
| URI: | http://dx.doi.org/10.1103/PhysRevLett.94.196103 http://hdl.handle.net/11536/148935 |
| ISSN: | 0031-9007 |
| DOI: | 10.1103/PhysRevLett.94.196103 |
| 期刊: | PHYSICAL REVIEW LETTERS |
| Volume: | 94 |
| Issue: | 19 |
| 起始頁: | 0 |
| 結束頁: | 0 |
| 顯示於類別: | 期刊論文 |

