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dc.contributor.authorFerng, SSen_US
dc.contributor.authorLin, CTen_US
dc.contributor.authorYang, KMen_US
dc.contributor.authorLin, DSen_US
dc.contributor.authorChiang, TCen_US
dc.date.accessioned2019-04-03T06:39:03Z-
dc.date.available2019-04-03T06:39:03Z-
dc.date.issued2005-05-20en_US
dc.identifier.issn0031-9007en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevLett.94.196103en_US
dc.identifier.urihttp://hdl.handle.net/11536/148935-
dc.description.abstractScanning tunneling microscopy is employed to investigate the recombinative desorption of H-2 from hydrogenated Si(100) surfaces consisting of dihydride (SiH2) and monohydride (SiH) surface species organized in (1x1), (3x1), and (2x1) configurations. The results show that desorption from dihydrides involves a pair of neighboring dihydrides linked along the tetrahedral bond direction. Dihydrides in (3x1) domains are separated in the same direction by monohydrides, and desorption from a pair is geometrically impossible. The same desorption mechanism nevertheless applies via first a position switching of dihydrides with neighboring monohydrides.en_US
dc.language.isoen_USen_US
dc.titleAtomistic view of the recombinative desorption of H-2 from H/Si(100)en_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevLett.94.196103en_US
dc.identifier.journalPHYSICAL REVIEW LETTERSen_US
dc.citation.volume94en_US
dc.citation.issue19en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000229277000038en_US
dc.citation.woscount9en_US
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