完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ferng, SS | en_US |
dc.contributor.author | Lin, CT | en_US |
dc.contributor.author | Yang, KM | en_US |
dc.contributor.author | Lin, DS | en_US |
dc.contributor.author | Chiang, TC | en_US |
dc.date.accessioned | 2019-04-03T06:39:03Z | - |
dc.date.available | 2019-04-03T06:39:03Z | - |
dc.date.issued | 2005-05-20 | en_US |
dc.identifier.issn | 0031-9007 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevLett.94.196103 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/148935 | - |
dc.description.abstract | Scanning tunneling microscopy is employed to investigate the recombinative desorption of H-2 from hydrogenated Si(100) surfaces consisting of dihydride (SiH2) and monohydride (SiH) surface species organized in (1x1), (3x1), and (2x1) configurations. The results show that desorption from dihydrides involves a pair of neighboring dihydrides linked along the tetrahedral bond direction. Dihydrides in (3x1) domains are separated in the same direction by monohydrides, and desorption from a pair is geometrically impossible. The same desorption mechanism nevertheless applies via first a position switching of dihydrides with neighboring monohydrides. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Atomistic view of the recombinative desorption of H-2 from H/Si(100) | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevLett.94.196103 | en_US |
dc.identifier.journal | PHYSICAL REVIEW LETTERS | en_US |
dc.citation.volume | 94 | en_US |
dc.citation.issue | 19 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000229277000038 | en_US |
dc.citation.woscount | 9 | en_US |
顯示於類別: | 期刊論文 |