完整後設資料紀錄
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dc.contributor.authorChen, CWen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorChen, YCen_US
dc.contributor.authorHsu, SLen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2019-04-02T06:00:17Z-
dc.date.available2019-04-02T06:00:17Z-
dc.date.issued2005-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.44.3848en_US
dc.identifier.urihttp://hdl.handle.net/11536/148968-
dc.description.abstractThe p-channel metal-oxide-semi conductor field-effect transistor (pMOSFET) with 50-nm-thick Si0.85Ge0.15 channel and in ultra-thin (EOT = 3.1 nm) N2O-annealed SiN gate dielectric has been shown to have well-performing on/off and output characteristics. Several methodologies for the device reliability characterization, such as stress-induced-leakage-current (SILC), drain-avalanche-hot-carrier (DAHC) injection, channel hot-carrier (CHC) injection and negative-bias-temperature-instability (NBTI), have been used and the results were compared. In terms of the long-term degradation, the excellent quality of the N2O-annealed SiN gate dielectric can be firmly obtained because only negligible degradations have been found after stressing no matter which technique was employed. Even so, the experimental results have been compared and we found that the HC degradation is worse than the NBTI degradation and the channel-hot-carrier (CHC) stressing is the worst case for all kinds of reliability testing. Meanwhile, we have also verified that the interface state generation is the dominant mechanism responsible for the HC-induced degradation while the electron trapping dominates the device degradation for the NBTI stressing.en_US
dc.language.isoen_USen_US
dc.subjectSiGe channelen_US
dc.subjectN2O-annealeden_US
dc.subjectSiN gate dielectricen_US
dc.subjectSILCen_US
dc.subjectchannel-hot-carrieren_US
dc.subjectNBTIen_US
dc.titleReliability of strained SiGe channel p-channel metal-oxide-semiconductor field-effect transistors with ultra-thin (EOT=3.1nm) N2O-annealed SiN gate dielectricen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.44.3848en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume44en_US
dc.citation.spage3848en_US
dc.citation.epage3853en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000230126000041en_US
dc.citation.woscount1en_US
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