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dc.contributor.authorJiang, Jian-Mingen_US
dc.contributor.authorYang, Po-Anen_US
dc.contributor.authorHsieh, Tsung-Hsuanen_US
dc.contributor.authorWei, Kung-Hwaen_US
dc.date.accessioned2014-12-08T15:20:56Z-
dc.date.available2014-12-08T15:20:56Z-
dc.date.issued2011-12-13en_US
dc.identifier.issn0024-9297en_US
dc.identifier.urihttp://dx.doi.org/10.1021/ma201848zen_US
dc.identifier.urihttp://hdl.handle.net/11536/14898-
dc.description.abstractWe have used Stille coupling polymerization to synthesize a series of new crystalline low band gap conjugated polymers-PTHBO, PBTTBO, and PTTTBO-constituting mainly electron-rich thiophene (TH), 2,2'-bithiophene (BT), and thieno[3,2-b]thiophene (TT) units in conjugation with electron-deficient 2,1,3-benzooxadiazole (BO) moieties. All of these polymers exhibited (i) sufficient energy offsets with respect to those of fullerenes to allow efficient charge transfer and (ii) low-lying highest occupied molecular orbital (HOMO, -5.47 eV). These polymers exhibited excellent thermal stability, high crystallinity, and broad spectral absorptions. As a result, bulk hetero-junction photovoltaic devices derived from these polymers and fullerenes provided open-circuit voltages (V(oc)) as high as 1.02 V. In particular, the photovoltaic device comprising the PTTTBO/PC(61)BM (1:1) blend system and 1,8-diiodooctane (DIO, 0.5 vol %) as an additive exhibited excellent performance, under AM 1.5 G irradiation (100 mW cm(-2)), with a value of V(oc) of 0.85 V, a short-circuit current density (J(sc)) of 11.6 mA cm(-2), a fill factor (FF) of 0.54, and a promising power conversion efficiency (PCE) of 5.3%.en_US
dc.language.isoen_USen_US
dc.titleCrystalline Low-Band Gap Polymers Comprising Thiophene and 2,1,3-Benzooxadiazole Units for Bulk Heterojunction Solar Cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/ma201848zen_US
dc.identifier.journalMACROMOLECULESen_US
dc.citation.volume44en_US
dc.citation.issue23en_US
dc.citation.spage9155en_US
dc.citation.epage9163en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000297604200011-
dc.citation.woscount33-
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