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dc.contributor.authorLin, BCen_US
dc.contributor.authorChang, KMen_US
dc.contributor.authorLai, CHen_US
dc.contributor.authorHsieh, KYen_US
dc.contributor.authorYao, JMen_US
dc.date.accessioned2019-04-02T06:00:18Z-
dc.date.available2019-04-02T06:00:18Z-
dc.date.issued2005-05-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.44.2993en_US
dc.identifier.urihttp://hdl.handle.net/11536/149002-
dc.description.abstractReoxidation of a high-nitrogen ultrathin oxynitride (similar to 1.3nm) has been studied. The reoxidation is conducted using an alternation of nitrous oxide and oxygen gas in rapid thermal oxidation (RTO). The new finding in this study is the zig-zag characteristic of the oxidation rate by O-2 and N2O. It is clear that the N2O oxidation rate is almost independent of the concentration of nitrogen in oxynitride through out the rapid thermal oxidation process, but the O2 oxidation rate is not.en_US
dc.language.isoen_USen_US
dc.subjectoxynitrideen_US
dc.subjectatomic oxygenen_US
dc.subjectrapid thermal oxidationen_US
dc.subjectzig-zagen_US
dc.subjectnitrous oxideen_US
dc.titleReoxidation behavior of high-nitrogen oxynitride films after O-2 and N2O treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.44.2993en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume44en_US
dc.citation.spage2993en_US
dc.citation.epage2994en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000231874900019en_US
dc.citation.woscount1en_US
Appears in Collections:Articles


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