標題: | Reoxidation behavior of high-nitrogen oxynitride films after O-2 and N2O treatment |
作者: | Lin, BC Chang, KM Lai, CH Hsieh, KY Yao, JM 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | oxynitride;atomic oxygen;rapid thermal oxidation;zig-zag;nitrous oxide |
公開日期: | 1-五月-2005 |
摘要: | Reoxidation of a high-nitrogen ultrathin oxynitride (similar to 1.3nm) has been studied. The reoxidation is conducted using an alternation of nitrous oxide and oxygen gas in rapid thermal oxidation (RTO). The new finding in this study is the zig-zag characteristic of the oxidation rate by O-2 and N2O. It is clear that the N2O oxidation rate is almost independent of the concentration of nitrogen in oxynitride through out the rapid thermal oxidation process, but the O2 oxidation rate is not. |
URI: | http://dx.doi.org/10.1143/JJAP.44.2993 http://hdl.handle.net/11536/149002 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.44.2993 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 44 |
起始頁: | 2993 |
結束頁: | 2994 |
顯示於類別: | 期刊論文 |