標題: Fabrication and characterization of In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods
作者: Hsueh, TH
Sheu, JK
Huang, HW
Chang, YH
Ou-Yang, MC
Kuo, HC
Wang, SC
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
關鍵字: GaN;inductively coupled plasma (ICP);nanorods;MQWs;micro-photoluminescence
公開日期: 1-十月-2005
摘要: ln(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods with diameters of 60-100nm were fabricated by inductively coupled plasma reactive ion etching with Cl-2/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80 K, reveals a large blue shift of about 90meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80W/cm(2). These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.
URI: http://dx.doi.org/10.1143/JJAP.44.7723
http://hdl.handle.net/11536/149035
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.7723
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
起始頁: 7723
結束頁: 7725
顯示於類別:期刊論文