完整後設資料紀錄
DC 欄位語言
dc.contributor.authorSimons, Hughen_US
dc.contributor.authorJakobsen, Anders Clemenen_US
dc.contributor.authorAhl, Sonja Rosenlunden_US
dc.contributor.authorPoulsen, Henning Friisen_US
dc.contributor.authorPantleon, Wolfgangen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorDetlefs, Carstenen_US
dc.contributor.authorValanoor, Nagarajanen_US
dc.date.accessioned2019-04-02T05:58:53Z-
dc.date.available2019-04-02T05:58:53Z-
dc.date.issued2019-03-01en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.nanolett.8b03839en_US
dc.identifier.urihttp://hdl.handle.net/11536/149037-
dc.description.abstractThe misfit dislocations formed at heteroepitaxial interfaces create long-ranging strain fields in addition to the epitaxial strain. For systems with strong lattice coupling, such as ferroic oxides, this results in unpredictable and potentially debilitating functionality and device performance. In this work, we use dark-field X-ray microscopy to map the lattice distortions around misfit dislocations in an epitaxial film of bismuth ferrite (BiFeO3), a well-known multiferroic. We demonstrate the ability to precisely quantify weak, long-ranging strain fields and their associated symmetry lowering without modifying the mechanical state of the film. We isolate the screw and edge components of the individual dislocations and show how they result in weak charge heterogeneities via flexoelectric coupling. We show that even systems with small lattice mismatches and additional mechanisms of stress relief (such as mechanical twinning) may still give rise to measurable charge and strain heterogeneities that extend over mesoscopic length scales. This sets more stringent physical limitations on device size, dislocation density, and the achievable degree of lattice mismatch in epitaxial systems.en_US
dc.language.isoen_USen_US
dc.subjectFerroelectricen_US
dc.subjectdislocationen_US
dc.subjectBiFeO3en_US
dc.subjectstrainen_US
dc.subjectmicroscopyen_US
dc.subjectdiffractionen_US
dc.titleNondestructive Mapping of Long-Range Dislocation Strain Fields in an Epitaxial Complex Metal Oxideen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acs.nanolett.8b03839en_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume19en_US
dc.citation.spage1445en_US
dc.citation.epage1450en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000461537600005en_US
dc.citation.woscount0en_US
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