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dc.contributor.authorRuan, Dun-Booen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorChen, Yi-Hengen_US
dc.contributor.authorChiu, Yu-Chuanen_US
dc.contributor.authorChien, To-Chunen_US
dc.contributor.authorYu, Min-Chinen_US
dc.contributor.authorGan, Kai-Jhihen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2019-04-02T05:58:52Z-
dc.date.available2019-04-02T05:58:52Z-
dc.date.issued2019-03-01en_US
dc.identifier.issn2199-160Xen_US
dc.identifier.urihttp://dx.doi.org/10.1002/aelm.201800824en_US
dc.identifier.urihttp://hdl.handle.net/11536/149039-
dc.description.abstractIn this study, indium gallium zinc oxide (InGaZnO [IGZO]) active layer capped with an ultrathin p-type stannous oxide (SnO) is demonstrated to be a thin film transistor (TFT) for color scanning and photosensing device applications. Typically, the sole IGZO-based TFT is blind to visible light and hard to be developed for visible light sensing. The combination of IGZO and SnO layers can extend the light detection spectrum into visible light wavelengths and ameliorate the photosensing characteristics. The optical responsivity and signal to noise ratio can even be enhanced from 1.05 x 10(-2) to 398.02 A W-1 and from 2.1 x 10(1) to 6.8 x 10(5) with at least four orders of magnitude, respectively. With the detailed material analysis and physical model discussed, it suggests that the large amount of additional light-excited carrier generated in the capping layer is the key factor for the significant improvement. Furthermore, the phenomenon of persistent photoconductivity can be effectively suppressed by its natural recombination under the heterojunction structure without applying charge-pumping method. The electrical uniformity of the sensor device is also highly potential for the next-generation displays integrating the photosensing functions.en_US
dc.language.isoen_USen_US
dc.subjectdetection spectrumen_US
dc.subjectin-cell photosensorsen_US
dc.subjectphotoresponsivityen_US
dc.subjectthin film transistorsen_US
dc.subjectultrathin light-absorbing layersen_US
dc.titlePhotoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/aelm.201800824en_US
dc.identifier.journalADVANCED ELECTRONIC MATERIALSen_US
dc.citation.volume5en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000461544600027en_US
dc.citation.woscount0en_US
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