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dc.contributor.authorFAN, JCen_US
dc.contributor.authorLEE, CPen_US
dc.contributor.authorHWANG, JAen_US
dc.contributor.authorHWANG, JHen_US
dc.date.accessioned2019-04-02T05:59:15Z-
dc.date.available2019-04-02T05:59:15Z-
dc.date.issued1995-09-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.406799en_US
dc.identifier.urihttp://hdl.handle.net/11536/149125-
dc.description.abstractEpitaxial lift-off (ELO) technique was used for the first time to transplant AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) to Si substrates. Both preprocessed (devices processed before transplantation) and postprocessed (devices processed after transplantation) ELO HBT's On Si were demonstrated in this study. The characteristics of those HBT's on Si with either technique show nearly identical characteristics of the HBT's on GaAs without transplantation, indicating the film quality is maintained after transplantation. Devices with a high current gain of 550 were transplanted without any degradation, and the current gain is not limited by the ELO process. This current gain value is the highest reported for GaAs HBT's on Si with any techniques.en_US
dc.language.isoen_USen_US
dc.titleALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SI SUBSTRATE USING EPITAXIAL LIFT-OFFen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.406799en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume16en_US
dc.citation.spage393en_US
dc.citation.epage395en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995RQ87100008en_US
dc.citation.woscount10en_US
Appears in Collections:Articles