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dc.contributor.authorHSIA, STen_US
dc.contributor.authorLEE, CPen_US
dc.contributor.authorHWANG, HLen_US
dc.date.accessioned2019-04-02T05:59:13Z-
dc.date.available2019-04-02T05:59:13Z-
dc.date.issued1995-09-01en_US
dc.identifier.issn0921-5107en_US
dc.identifier.urihttp://dx.doi.org/10.1016/0921-5107(94)01209-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/149131-
dc.description.abstractA thermally stable, low resistance ohmic contact system Ni-Ln-Ni to n-GaAs was investigated. The lowest value of the specific contact resistance rho(c) was 1.71 x 10(-4) Omega cm(2). Hearing the contact up to 400 degrees C for 5 h did not obviously change the value of rho(c). It was observed by Auger electron spectroscopy and X-ray diffraction that Ni-Ln compounds, Ga-Ni and InAs formed at the metal-GaAs interface. It was noted that In reacted with GaAs and formed a heterojunction ohmic contact (such as InAs-InxGa1-xAs-GaAs) and due to the low melting point (156 degrees C) of In, additions of Ni are needed to completely react the remaining In to form a high melting point compound.en_US
dc.language.isoen_USen_US
dc.subjectAUGER ELECTRON SPECTROSCOPYen_US
dc.subjectGALLIUM ARSENIDEen_US
dc.subjectCONTACT RESISTANCEen_US
dc.subjectNICKELen_US
dc.titleEVALUATION OF NI-IN-NI MULTILAYERS FOR THERMALLY STABLE OHMIC CONTACTS TO N-GAASen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/0921-5107(94)01209-1en_US
dc.identifier.journalMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGYen_US
dc.citation.volume33en_US
dc.citation.spage178en_US
dc.citation.epage181en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995RV13800018en_US
dc.citation.woscount2en_US
Appears in Collections:Articles


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