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dc.contributor.authorMA, KPen_US
dc.contributor.authorLIN, CTen_US
dc.contributor.authorCHENG, HCen_US
dc.date.accessioned2019-04-02T05:59:13Z-
dc.date.available2019-04-02T05:59:13Z-
dc.date.issued1995-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.34.L1100en_US
dc.identifier.urihttp://hdl.handle.net/11536/149133-
dc.description.abstractBy implanting BF2+ ions into thin polycrystalline Si films with subsequent low-temperature (as low as 500 degrees C) annealing, excellent Pt-silicided shallow p(+)n junctions have been formed. The samples implanted under the conditions of 100 keV/5 x 10(15) cm(-2) showed a leakage of 7 nA/cm(2) and a junction depth of about 0.05 mu m after 500 degrees C annealing, and the current leakages further decreased to a value at about 2 nA/cm(2) when the annealing temperature was raised to 550 degrees C. Various conditions of implant and annealing were examined to determine and characterize their effects on the resultant junctions.en_US
dc.language.isoen_USen_US
dc.subjectSHALLOW JUNCTIONen_US
dc.subjectLOW-TEMPERATURE ANNEALINGen_US
dc.subjectJUNCTION DEPTHen_US
dc.titleNOVEL TECHNIQUE TO FORM PT-SILICIDED SHALLOW P(+)N JUNCTIONS USING LOW-TEMPERATURE PROCESSESen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.34.L1100en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERSen_US
dc.citation.volume34en_US
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:A1995RV19100002en_US
dc.citation.woscount0en_US
Appears in Collections:Articles