完整後設資料紀錄
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dc.contributor.authorCHANG, DAen_US
dc.contributor.authorLIN, Pen_US
dc.contributor.authorTSENG, TYen_US
dc.date.accessioned2019-04-02T05:59:28Z-
dc.date.available2019-04-02T05:59:28Z-
dc.date.issued1995-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.34.4854en_US
dc.identifier.urihttp://hdl.handle.net/11536/149140-
dc.description.abstractWe report the effects of substrate temperature and O-2/Ar ratios on the properties of ZrTiO4 thin films prepared by RF magnetron sputtering. The films were deposited at a constant gas pressure (0.133 Pa) with various substrate temperatures (25-450 degrees C) and different O-2/Ar ratios from 0/100 to 20/80. The deposition rate decreases with increasing oxygen partial pressure and substrate temperature. Moreover, the higher O-2 content increases the surface roughness of deposited films, which reduces the transmittance of the films. The effects of substrate temperature and oxygen partial pressure on the stoichiometric composition, optical constant, crystallinity phase, surface morphology, and adhesion have also been systematically investigated.en_US
dc.language.isoen_USen_US
dc.subjectZIRCONIUM TITANATEen_US
dc.subjectRF MAGNETRON SPUTTERINGen_US
dc.subjectREFRACTIVE INDEXen_US
dc.subjectEXTINCTION COEFFICIENTen_US
dc.subjectCRYSTALLINITY PHASEen_US
dc.titleEFFECTS OF SUBSTRATE-TEMPERATURE AND OXYGEN PARTIAL-PRESSURE ON THE PROPERTIES OF SPUTTERED ZIRCONIUM TITANATE THIN-FILMSen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.34.4854en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume34en_US
dc.citation.spage4854en_US
dc.citation.epage4861en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995RX26800048en_US
dc.citation.woscount4en_US
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