完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | CHANG, DA | en_US |
dc.contributor.author | LIN, P | en_US |
dc.contributor.author | TSENG, TY | en_US |
dc.date.accessioned | 2019-04-02T05:59:28Z | - |
dc.date.available | 2019-04-02T05:59:28Z | - |
dc.date.issued | 1995-09-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.34.4854 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/149140 | - |
dc.description.abstract | We report the effects of substrate temperature and O-2/Ar ratios on the properties of ZrTiO4 thin films prepared by RF magnetron sputtering. The films were deposited at a constant gas pressure (0.133 Pa) with various substrate temperatures (25-450 degrees C) and different O-2/Ar ratios from 0/100 to 20/80. The deposition rate decreases with increasing oxygen partial pressure and substrate temperature. Moreover, the higher O-2 content increases the surface roughness of deposited films, which reduces the transmittance of the films. The effects of substrate temperature and oxygen partial pressure on the stoichiometric composition, optical constant, crystallinity phase, surface morphology, and adhesion have also been systematically investigated. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | ZIRCONIUM TITANATE | en_US |
dc.subject | RF MAGNETRON SPUTTERING | en_US |
dc.subject | REFRACTIVE INDEX | en_US |
dc.subject | EXTINCTION COEFFICIENT | en_US |
dc.subject | CRYSTALLINITY PHASE | en_US |
dc.title | EFFECTS OF SUBSTRATE-TEMPERATURE AND OXYGEN PARTIAL-PRESSURE ON THE PROPERTIES OF SPUTTERED ZIRCONIUM TITANATE THIN-FILMS | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.34.4854 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
dc.citation.volume | 34 | en_US |
dc.citation.spage | 4854 | en_US |
dc.citation.epage | 4861 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1995RX26800048 | en_US |
dc.citation.woscount | 4 | en_US |
顯示於類別: | 期刊論文 |