标题: STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
作者: GUO, JD
FENG, MS
GUO, RJ
PAN, FM
CHANG, CY
材料科学与工程学系
电子工程学系及电子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公开日期: 30-十月-1995
摘要: Schottky barriers on n-type GaN films grown by low-pressure metalorganic chemical vapor deposition are characterized and derived. A thin Pt or a Pd layer is deposited by electron-gun evaporation to form Schottky contacts in a vacuum below 1X10(-6) Torr. The Schottky barrier heights of Pt on the n-GaN film are determined to be 1.04 and 1.03 eV by current-voltage (C-V) and current density-temperature (J-T) measurements, respectively. Also based on C-V and J-T measurements, the measured barrier height of Pd on n-GaN is 0.94 and 0.91 eV, respectively Schottky characteristics of Pt and Pd observed in the experiment are compared with those of Au and Ti in previous reports. (C) 1995 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.114327
http://hdl.handle.net/11536/149153
ISSN: 0003-6951
DOI: 10.1063/1.114327
期刊: APPLIED PHYSICS LETTERS
Volume: 67
起始页: 2657
结束页: 2659
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