标题: | STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION |
作者: | GUO, JD FENG, MS GUO, RJ PAN, FM CHANG, CY 材料科学与工程学系 电子工程学系及电子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
公开日期: | 30-十月-1995 |
摘要: | Schottky barriers on n-type GaN films grown by low-pressure metalorganic chemical vapor deposition are characterized and derived. A thin Pt or a Pd layer is deposited by electron-gun evaporation to form Schottky contacts in a vacuum below 1X10(-6) Torr. The Schottky barrier heights of Pt on the n-GaN film are determined to be 1.04 and 1.03 eV by current-voltage (C-V) and current density-temperature (J-T) measurements, respectively. Also based on C-V and J-T measurements, the measured barrier height of Pd on n-GaN is 0.94 and 0.91 eV, respectively Schottky characteristics of Pt and Pd observed in the experiment are compared with those of Au and Ti in previous reports. (C) 1995 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.114327 http://hdl.handle.net/11536/149153 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.114327 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 67 |
起始页: | 2657 |
结束页: | 2659 |
显示于类别: | Articles |