1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorYeh, WKen_US
dc.contributor.authorChan, KYen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorTsai, MHen_US
dc.contributor.authorChen, SHen_US
dc.contributor.authorChen, MCen_US
dc.contributor.authorLin, MSen_US
dc.date.accessioned2014-12-08T15:02:53Z-
dc.date.available2014-12-08T15:02:53Z-
dc.date.issued1996-02-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.35.1115en_US
dc.identifier.urihttp://hdl.handle.net/11536/1491-
dc.description.abstractA post chemical vapor deposition of tungsten (CVD-W) treatment by N-2 plasma is proposed to suppress the WAl12 formation during subsequent thermal annealing, which improves the thermal stability of W-filled contact. Selective CVD-W is employed to fill the contact hole. Following W deposition, in situ N-2 plasma treatment is performed prior to Al alloy metallization. It is shown that this post CVD-W treatment efficiently suppresses the formation of WAl12, resulting in an improvement of the barrier capability of W-filled contact.en_US
dc.language.isoen_USen_US
dc.subjectCVD-Wen_US
dc.subjectdiffusion barrieren_US
dc.subjectW nitrideen_US
dc.subjectthermal stabilityen_US
dc.titleAn efficient improvement for barrier effect of W-filled contacten_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.35.1115en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume35en_US
dc.citation.issue2Ben_US
dc.citation.spage1115en_US
dc.citation.epage1119en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996UD94100068-
顯示於類別：會議論文


文件中的檔案：

  1. A1996UD94100068.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。

相關內容
Loading...