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dc.contributor.authorChin, Aen_US
dc.contributor.authorLin, HYen_US
dc.contributor.authorLin, BCen_US
dc.date.accessioned2019-04-02T05:58:30Z-
dc.date.available2019-04-02T05:58:30Z-
dc.date.issued1996-07-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/0038-1101(95)00415-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/149226-
dc.description.abstractWe have studied the optical and electrical properties of InGaAlP/InGaP PIN heterostructures by the effects of post-growth annealing, substrate misorientation and growth temperature. For the as-grown p-type In-0.5(Ga0.5Al0.5)(0.5)P, the 15 degrees misoriented sample shows the largest hole concentration of 1 x 10(18) cm(-3) as compared to 20 and 10 degrees misoriented samples. After annealing at 900 degrees C for 30 s, the hole concentration increases about three times to 2.6 x 10(18) cm(-3). The increased hole concentration is related to the four times enhanced photoluminescence (PL) intensity. In the In0.6Ga0.4P/In-0.5(Ga0.6Al0.4)(0.5)P stained multiple quantum wells, the post-growth annealing also improves the PL integrated intensity. The PL intensity on an as-grown sample decreases with the increased degree of misorientation, while the PL peak energy increases with the increased degree of misorientation, from 0 degrees, 2 degrees, 10 degrees toward 15 degrees. The PL intensities are larger for samples grown at 760 degrees C than those grown at 700 degrees C. Copyright (C) 1996 Elsevier Science Ltd.en_US
dc.language.isoen_USen_US
dc.titleEnhancement of the optical and electrical properties in InGaAlP/InGaP PIN heterostructures by rapid thermal annealing on misoriented substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/0038-1101(95)00415-7en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume39en_US
dc.citation.spage1005en_US
dc.citation.epage1009en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996UU39400009en_US
dc.citation.woscount0en_US
Appears in Collections:Articles