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dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorChang, Hsiao-Fenen_US
dc.date.accessioned2014-12-08T15:21:00Z-
dc.date.available2014-12-08T15:21:00Z-
dc.date.issued2011-12-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2011.2168375en_US
dc.identifier.urihttp://hdl.handle.net/11536/14922-
dc.description.abstractWe have prepared photoerasable organic nonvolatile memories using high-dielectric (high-k) hafnium silicate as device insulators. The high-k material can effectively lower the operating voltage of the organic memory devices. The nonvolatile memory can be written by applying a gate bias and be effectively erased by photon illumination. The spectral study of the photoinduced recovery effect indicated that the erasing mechanism should be relevant to the recombination between the trapped charges and the photogenerated exctions.en_US
dc.language.isoen_USen_US
dc.subjectAbsorptionen_US
dc.subjecthigh-k gate dielectricsen_US
dc.subjectnonvolatile memoryen_US
dc.subjectorganic semiconductorsen_US
dc.titlePhotoerasable Organic Nonvolatile Memory Devices Based on Hafnium Silicate Insulatorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2011.2168375en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume32en_US
dc.citation.issue12en_US
dc.citation.spage1740en_US
dc.citation.epage1742en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000297352500031-
dc.citation.woscount1-
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