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dc.contributor.authorChen, WCen_US
dc.contributor.authorChang, CSen_US
dc.date.accessioned2019-04-02T05:58:31Z-
dc.date.available2019-04-02T05:58:31Z-
dc.date.issued1996-08-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.362957en_US
dc.identifier.urihttp://hdl.handle.net/11536/149263-
dc.description.abstractA model of effective surface potential energy is proposed to explain unknown behavior of carrier transport in film and leakage currents in Schottky diodes. X-ray photoelectron spectroscopy is employed to investigate a series of band diagrams of arsenic-ion-implanted GaAs films. It is shown that the effective surface potential energies, affected by the shift of core levels, are due to different microstructures and atomic environments in these films at different annealing temperatures. Moreover, the effective barrier heights on the surfaces of these films are changed by the different effective surface potential energies which increase from 0.49 to 0.75 eV in films annealed from 200 to 600 degrees C, but slightly decrease to 0.7 eV in films annealed up to 800 degrees C. (C) 1996 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleElectrical properties in arsenic-ion-implanted GaAsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.362957en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume80en_US
dc.citation.spage1600en_US
dc.citation.epage1604en_US
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:A1996VA59400050en_US
dc.citation.woscount3en_US
Appears in Collections:Articles