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dc.contributor.authorChin, Aen_US
dc.contributor.authorLin, BCen_US
dc.contributor.authorChen, WJen_US
dc.date.accessioned2019-04-02T05:58:32Z-
dc.date.available2019-04-02T05:58:32Z-
dc.date.issued1996-09-09en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.117049en_US
dc.identifier.urihttp://hdl.handle.net/11536/149296-
dc.description.abstractWe have designed a simple-hot wall low pressure chemical vapor deposition (LPCVD) system to grow high quality epitaxial Si films from 550 to 900 degrees C. The epitaxial film has been examined by scan electron microscopy for surface morphology, and by x-ray diffraction and cross-sectional transmission electron microscopy for crystallinity. Its quality has been found comparable to that of the substrate. Reduction of moisture and oxygen in the ambient is critical to the success of the growth at low temperatures. A combination of a leak-tight LPCVD reactor, a high flow rate Of 61/min of H-2 purge, and a pre-bake at high temperature of 950 degrees C has been used to achieve the reduction of moisture and oxygen. Degraded films form with increasing full width at half maximum of x-ray diffraction peak when a pre-bake at lower temperature is used. (C) 1996 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleHigh quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 degrees Cen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.117049en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume69en_US
dc.citation.spage1617en_US
dc.citation.epage1619en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996VF48500040en_US
dc.citation.woscount9en_US
Appears in Collections:Articles