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dc.contributor.authorChen, LFen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2019-04-02T05:58:33Z-
dc.date.available2019-04-02T05:58:33Z-
dc.date.issued1996-09-01en_US
dc.identifier.issn1070-9886en_US
dc.identifier.urihttp://dx.doi.org/10.1109/95.536844en_US
dc.identifier.urihttp://hdl.handle.net/11536/149311-
dc.description.abstractThe electrical properties of positive temperature coefficient of resistance (PTCR) ceramics of composition (Ba, Pb, La)TiO3 prepared from commercial BaTiO3 powders doped with different additives were studied. It was proposed here that different additives might have generated the corresponding number of possible surface states, such as, the segregation behavior of Mn ions (3d transition metal ions), oxygen adsorption reaction resulting from BN addition, the action of Ca replacing the Ti sites (Ca''(Ti)), and the natural intrinsic defects (V''(Ba), V''(Pb)). In general, some experimental derivations were also offered that majority of the surface states, which possessed their individual surface energy level, possibly coexisted onto the grain surface. Utilizing the concept of the coexistence of different types of surface states in the energy band, a satisfactory point-to-point agreement was obtained between the measured result and calculated values for the resistivity curve. Our experimental results were analyzed based on the terms of the Heywang-Jonker model and have shown that the assumption of a Hewang barrier was a reasonable approach for our set of samples; however, the distribution and types of grain-boundary acceptor states classification were required.en_US
dc.language.isoen_USen_US
dc.subjectPTCRen_US
dc.subjectsurface statesen_US
dc.subjectelectrical propertiesen_US
dc.subjectadditivesen_US
dc.subjectHeywang barrieren_US
dc.titleGrain-boundary surface states of (Ba, Pb)TiO3 positive temperature coefficient ceramics doped with different additives and its influence on electrical propertiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/95.536844en_US
dc.identifier.journalIEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART Aen_US
dc.citation.volume19en_US
dc.citation.spage423en_US
dc.citation.epage430en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996VJ59000017en_US
dc.citation.woscount10en_US
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