完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, JFen_US
dc.contributor.authorChen, NCen_US
dc.contributor.authorLiu, HSen_US
dc.date.accessioned2019-04-02T05:58:29Z-
dc.date.available2019-04-02T05:58:29Z-
dc.date.issued1996-11-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-996-0037-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/149354-
dc.description.abstractThe GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb-4/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550 degrees C under a Sb-4/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample's donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminesence spectra at 4.5K.en_US
dc.language.isoen_USen_US
dc.subjectdeep levelsen_US
dc.subjectGaSb Schottky diodesen_US
dc.subjectHall measurementen_US
dc.subjectphotoluminescence (PL)en_US
dc.subjectSnTe dopantsen_US
dc.titleDeep levels, electrical and optical characteristics in SnTe-doped GaSb Schottky diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-996-0037-9en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume25en_US
dc.citation.spage1790en_US
dc.citation.epage1796en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1996VT29900018en_US
dc.citation.woscount0en_US
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