完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Y. H. | en_US |
dc.contributor.author | Sun, Y. C. | en_US |
dc.contributor.author | Jian, W. B. | en_US |
dc.contributor.author | Chang, H. M. | en_US |
dc.contributor.author | Huang, Y. S. | en_US |
dc.contributor.author | Lin, J. J. | en_US |
dc.date.accessioned | 2019-04-02T06:01:10Z | - |
dc.date.available | 2019-04-02T06:01:10Z | - |
dc.date.issued | 2008-01-30 | en_US |
dc.identifier.issn | 0957-4484 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0957-4484/19/04/045711 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/149357 | - |
dc.description.abstract | We have studied the electrical transport properties of individual single-crystalline IrO2 nanorods prepared by the metal-organic chemical vapour deposition method. With the help of the standard electron-beam lithographic technique, individual nanorods are contacted by Cr/Au submicron electrodes from above. Utilizing two-probe, three-probe and four-probe measurement configurations, not only the intrinsic electrical transport properties of the individual nanorods but also the electronic contact resistances, Rc(T), have been determined from 300 K down to liquid-helium temperatures. Our measured resistivity behaviour of the nanorods is in close agreement with the current theoretical understanding of this rutile material. On the other hand, we found that the temperature behaviour of the electronic contact resistance obeys the law log R-C alpha T-1/2 over an extremely wide temperature range, from approximately 100 K down to liquid-helium temperatures. This latter conduction process is ascribed to the hopping of electrons through nanoscale Cr granules and/or an amorphous coating incidentally formed at the interface between the submicron Cr/Au electrode and the nanorod. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Electrical transport studies of individual IrO2 nanorods and their nanorod contacts | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0957-4484/19/04/045711 | en_US |
dc.identifier.journal | NANOTECHNOLOGY | en_US |
dc.citation.volume | 19 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000252967000034 | en_US |
dc.citation.woscount | 13 | en_US |
顯示於類別: | 期刊論文 |