Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Shean-Yih | en_US |
dc.contributor.author | Chiou, Bi-Shiou | en_US |
dc.date.accessioned | 2019-04-02T06:01:10Z | - |
dc.date.available | 2019-04-02T06:01:10Z | - |
dc.date.issued | 2008-01-01 | en_US |
dc.identifier.issn | 1099-0062 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/1.2837640 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/149368 | - |
dc.description.abstract | The effects of adding a Ba0.5Sr0.5TiO3 (BST) seeding layer of perovskite-based oxide CaCu3Ti4O12 (CCTO) thin films grown on Pt/TiN/SiO2/Si (100) substrates on crystallographic structure, surface morphology, dielectric loss, leakage current, and thermal stability were investigated. Adding a BST seeding layer to the interface between CCTO/Pt structures has remarkable influences on CCTO thin-film properties, including dielectric properties, insulating characteristics, and the temperature coefficient of capacitance (TCC), as well as thin-film grain sizes. CCTO films with a 2 nm BST seeding layer showed smaller grain sizes than those specimens of CCTO films without a BST seeding layer. The dielectric loss, leakage current density, surface roughness, and thermal stability (TCC) of CCTO films with a 2 nm BST seeding layer were improved by about 23%, 1 order of magnitude at 360 kV/cm, 38%, and 61%, respectively, compared with that of CCTO films without a BST seeding layer. The correlations of material properties, such as dielectric loss, leakage current, surface roughness, and thermal stability properties, suggest that adding a 2 nm BST seeding layer to CCTO films capacitor structure is another optimal choice for metal-insulator-metal device applications. (C) 2008 The Electrochemical Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Improving dielectric loss and thermal stability of CaCu3Ti4O12 thin films by adding BST layer | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.2837640 | en_US |
dc.identifier.journal | ELECTROCHEMICAL AND SOLID STATE LETTERS | en_US |
dc.citation.volume | 11 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Innovative Packaging Research Center | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Innovative Packaging Research Center | en_US |
dc.identifier.wosnumber | WOS:000253238000018 | en_US |
dc.citation.woscount | 1 | en_US |
Appears in Collections: | Articles |