標題: | Complementary inverter circuits based on p-SnO2 and n-In2O3 thin film transistors |
作者: | Dhananjay Chu, Chih-Wei Ou, Chun-Wei Wu, Meng-Chyi Ho, Zhong-Yo Ho, Kuo-Chuan Lee, Shih-Wei 光電工程學系 Department of Photonics |
公開日期: | 9-六月-2008 |
摘要: | Thin film transistors (TFTs) of indium oxide (In2O3) and tin oxide (SnO2) were fabricated on SiO2 gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In2O3 films were polycrystalline in nature with preferred (222) orientation and SnO2 films exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest that SnO2 films were oxygen rich and presume mixed oxidation states of Sn, namely Sn2+ and Sn4+. While the In2O3 based TFTs possess n-type channel conduction, SnO2 based TFTs exhibited anomalous p-type conductivity. Integration of these n- and p-type devices resulted in complementary inverter with a gain of 11. (C) 2008 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2936275 http://hdl.handle.net/11536/149435 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2936275 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 92 |
顯示於類別: | 期刊論文 |