Physical characteristics of N-2 annealing on room-temperature-deposited ion plating oxide

doi:10.1063/1.118631

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yeh, CF	en_US
dc.contributor.author	Chen, TJ	en_US
dc.contributor.author	Kao, JS	en_US
dc.date.accessioned	2019-04-02T06:00:26Z	-
dc.date.available	2019-04-02T06:00:26Z	-
dc.date.issued	1997-03-24	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.118631	en_US
dc.identifier.uri	http://hdl.handle.net/11536/149465	-
dc.description.abstract	The effects of N-2 annealing on the physical properties of room-temperature-deposited ion plating (IF) oxide have been characterized. As-deposited IP oxide exhibits higher refractive index and dielectric constant values than high-temperature-annealed IP oxide. Strained bonds existing in as-deposited oxide can be relaxed by N-2 annealing depending on the annealing temperature. After annealing at 800 degrees C, the physical characteristics of IP oxide are comparable to those of thermal oxide. (C) 1997 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Physical characteristics of N-2 annealing on room-temperature-deposited ion plating oxide	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.118631	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	70	en_US
dc.citation.spage	1611	en_US
dc.citation.epage	1613	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1997WP19900041	en_US
dc.citation.woscount	3	en_US
顯示於類別：	期刊論文