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dc.contributor.authorTsai, CMen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2019-04-02T06:00:22Z-
dc.date.available2019-04-02T06:00:22Z-
dc.date.issued1997-03-27en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:19970405en_US
dc.identifier.urihttp://hdl.handle.net/11536/149487-
dc.description.abstractThe authors demonstrate a novel reflection-type normally-on two-wavelength modulator by combining two quantum-well structures with different operating wavelengths in a coupled cavity structure. Reflection spectra show simultaneous modulations at wavelengths of 856 and 886 nm in the device consisting of GaAs/A1GaAs and InGaAs/A1GaAs quantum wells for each wavelength. Under separate applied voltages, maximum reflectivity changes of 70 and 54% were obtained for the two wavelengths. To the best of the authors' knowledge, this is the First two-wavelength reflection modulator ever reported.en_US
dc.language.isoen_USen_US
dc.subjectsemiconductor quantum wellsen_US
dc.subjectoptical modulationen_US
dc.titleReflection-type normally-on two-wavelength modulatoren_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:19970405en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume33en_US
dc.citation.spage611en_US
dc.citation.epage613en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997WU00100048en_US
dc.citation.woscount3en_US
Appears in Collections:Articles