Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tsai, CM | en_US |
dc.contributor.author | Lee, CP | en_US |
dc.date.accessioned | 2019-04-02T06:00:22Z | - |
dc.date.available | 2019-04-02T06:00:22Z | - |
dc.date.issued | 1997-03-27 | en_US |
dc.identifier.issn | 0013-5194 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1049/el:19970405 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/149487 | - |
dc.description.abstract | The authors demonstrate a novel reflection-type normally-on two-wavelength modulator by combining two quantum-well structures with different operating wavelengths in a coupled cavity structure. Reflection spectra show simultaneous modulations at wavelengths of 856 and 886 nm in the device consisting of GaAs/A1GaAs and InGaAs/A1GaAs quantum wells for each wavelength. Under separate applied voltages, maximum reflectivity changes of 70 and 54% were obtained for the two wavelengths. To the best of the authors' knowledge, this is the First two-wavelength reflection modulator ever reported. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | semiconductor quantum wells | en_US |
dc.subject | optical modulation | en_US |
dc.title | Reflection-type normally-on two-wavelength modulator | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1049/el:19970405 | en_US |
dc.identifier.journal | ELECTRONICS LETTERS | en_US |
dc.citation.volume | 33 | en_US |
dc.citation.spage | 611 | en_US |
dc.citation.epage | 613 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1997WU00100048 | en_US |
dc.citation.woscount | 3 | en_US |
Appears in Collections: | Articles |