Full metadata record
DC FieldValueLanguage
dc.contributor.authorChen, CSen_US
dc.contributor.authorKuo, CTen_US
dc.contributor.authorWu, TBen_US
dc.contributor.authorLin, INen_US
dc.date.accessioned2019-04-02T06:00:22Z-
dc.date.available2019-04-02T06:00:22Z-
dc.date.issued1997-03-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.36.1169en_US
dc.identifier.urihttp://hdl.handle.net/11536/149488-
dc.description.abstractThe V2O5-based ZnO varistor materials were successfully densified using microwave sintering process. The materials can reach a high density as 94.6% T.D. (theoretical density) when sintered at 800 degrees C (10 min) but the grain growth was initiated only when sintered at a higher temperature than 1000 degrees C (10 min). The varistor characteristics, including breakdown voltage (V-bk), nonlinear coefficient (alpha) and leakage current density (J(L)), degraded markedly for the samples sintered at too high temperature (i.e., T greater than or equal to 1000 degrees C) and for too long period (i.e., t greater than or equal to 10 min) that was ascribed to the occurrence of abnormal grain growth. Contrarily, the intrinsic characteristics, including potential barrier height (phi(b)) and donor density (N-d), varied only moderately with these sintering conditions. The V2O5-based ZnO materials sintered at 1000 degrees C (5 min) possessed good varistor characteristics as V-bk = 248 V/mm, alpha = 31 and J(L) = 4.6 x 10(-5) A/cm(2). The corresponding intrinsic parameters are phi(b) = 0.63 eV and N-d = 2.37 x 10(24) m(-3).en_US
dc.language.isoen_USen_US
dc.subjectZnO varistoren_US
dc.subjectV2O5en_US
dc.subjectmicrowave sinteringen_US
dc.subjectmicrostructureen_US
dc.subjectnonlinear propertyen_US
dc.subjectpotential barrier heighten_US
dc.subjectdonor densityen_US
dc.titleMicrostructures and electrical properties of V2O5-based multicomponent ZnO varistors prepared by microwave sintering processen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.36.1169en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume36en_US
dc.citation.spage1169en_US
dc.citation.epage1175en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:A1997WU03100038en_US
dc.citation.woscount56en_US
Appears in Collections:Articles