標題: | GaN growth on Si(111) using simultaneous AlN/alpha-Si3N4 buffer structure |
作者: | Chang, Jet Rung Yang, Tsung Hsi Ku, Jui Tai Shen, Shih Guo Chen, Yi Cheng Wong, Yuen Yee Chang, Chun Yen 材料科學與工程學系 電子物理學系 電子工程學系及電子研究所 電子與資訊研究中心 Department of Materials Science and Engineering Department of Electrophysics Department of Electronics Engineering and Institute of Electronics Microelectronics and Information Systems Research Center |
關鍵字: | GaN;Si(111) substrate;AlN;alpha-Si3N4;rf-MBE |
公開日期: | 1-七月-2008 |
摘要: | In this study, we examined the growth of a simultaneous AIN/alpha-Si3N4 buffer layer for crack-free GaN growth oil a Si(111) substrate. The compressive stress in the AlN/alpha-Si3N4/Si(111) structure retards the cracking ill the GaN layer. It is demonstrated that the Al-preseeded layer is a critical factor for accornplishing AlN and the crystalline alpha-Si3N4 layer simultaneously. The effect of Al layer deposition time on the c-axis lattice constants of the subsequent AlN layer, and the effect of the crystalline alpha-Si3N4 layer oil GaN quality were investigated by X-ray diffraction analysis. The 1 : 2 lattice coincidently matches at the alpha-Si3N4(0001)/Si(111) interface, and the 5 : 2 coincident lattice interface at AlN(0001)/alpha-Si3N4(0001) reduces the lattice mismatch in the AIN/alpha Si3N4/Si(111) structure. The 5 : 4 coincident lattice in the AIN/alpha-Si3N4/Si(111) structure is related to the reduction in the tensile stress in the AIN epilayers. The thickness of crack-free GaN is 2.00 mu m. The full widths at half-maximum (FWHM) of the X-ray rocking curve and neutral-donor-bound exciton (D degrees X) are 1012arcsec and 5.90meV, respectively. |
URI: | http://dx.doi.org/10.1143/JJAP.47.5572 http://hdl.handle.net/11536/149523 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.47.5572 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 47 |
起始頁: | 5572 |
結束頁: | 5575 |
顯示於類別: | 期刊論文 |