標題: GaN growth on Si(111) using simultaneous AlN/alpha-Si3N4 buffer structure
作者: Chang, Jet Rung
Yang, Tsung Hsi
Ku, Jui Tai
Shen, Shih Guo
Chen, Yi Cheng
Wong, Yuen Yee
Chang, Chun Yen
材料科學與工程學系
電子物理學系
電子工程學系及電子研究所
電子與資訊研究中心
Department of Materials Science and Engineering
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
Microelectronics and Information Systems Research Center
關鍵字: GaN;Si(111) substrate;AlN;alpha-Si3N4;rf-MBE
公開日期: 1-七月-2008
摘要: In this study, we examined the growth of a simultaneous AIN/alpha-Si3N4 buffer layer for crack-free GaN growth oil a Si(111) substrate. The compressive stress in the AlN/alpha-Si3N4/Si(111) structure retards the cracking ill the GaN layer. It is demonstrated that the Al-preseeded layer is a critical factor for accornplishing AlN and the crystalline alpha-Si3N4 layer simultaneously. The effect of Al layer deposition time on the c-axis lattice constants of the subsequent AlN layer, and the effect of the crystalline alpha-Si3N4 layer oil GaN quality were investigated by X-ray diffraction analysis. The 1 : 2 lattice coincidently matches at the alpha-Si3N4(0001)/Si(111) interface, and the 5 : 2 coincident lattice interface at AlN(0001)/alpha-Si3N4(0001) reduces the lattice mismatch in the AIN/alpha Si3N4/Si(111) structure. The 5 : 4 coincident lattice in the AIN/alpha-Si3N4/Si(111) structure is related to the reduction in the tensile stress in the AIN epilayers. The thickness of crack-free GaN is 2.00 mu m. The full widths at half-maximum (FWHM) of the X-ray rocking curve and neutral-donor-bound exciton (D degrees X) are 1012arcsec and 5.90meV, respectively.
URI: http://dx.doi.org/10.1143/JJAP.47.5572
http://hdl.handle.net/11536/149523
ISSN: 0021-4922
DOI: 10.1143/JJAP.47.5572
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 47
起始頁: 5572
結束頁: 5575
顯示於類別:期刊論文