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dc.contributor.authorLin, MFen_US
dc.contributor.authorHuang, CSen_US
dc.contributor.authorChuu, DSen_US
dc.date.accessioned2019-04-03T06:38:50Z-
dc.date.available2019-04-03T06:38:50Z-
dc.date.issued1997-05-15en_US
dc.identifier.issn0163-1829en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.55.13961en_US
dc.identifier.urihttp://hdl.handle.net/11536/149541-
dc.description.abstractThe pi-electronic excitations df graphite layers are studied within the random-phase approximation. They principally reflect the pi-band characteristics, the strong wave-vector dependence, the anisotropic behavior, and the special symmetry. The pi plasmons in graphite have strong dispersion relations with the transferred momentum (q). They behave as an optical plasmon in a three-dimensional electron gas at small q. Moreover, the anisotropic behavior at the plane is apparent at large q. For a single graphite layer, the pi plasmons would disappear at very small q, and their frequencies are obviously reduced. The absence of interlayer Coulomb interactions is the main reason for this. The stage-1 graphite intercalation compounds (GIC's), as compared with graphite, exhibit the richer excitation spectra and the lower pi-plasmon frequencies. They have the intraband plasmon as well as the interband pi plasmon. These two kinds of plasmons are quite different from each other in certain respects, e.g., the cause of the plasmon. The enhanced interlayer distances could effectively reduce the pi-plasmon frequency, but not the transferred charges. The calculated plasmon frequencies are consistent with the experimental measurements on graphite and stage-1 GIC's.en_US
dc.language.isoen_USen_US
dc.titlePlasmons in graphite and stage-1 graphite intercalation compoundsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.55.13961en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume55en_US
dc.citation.issue20en_US
dc.citation.spage13961en_US
dc.citation.epage13971en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1997XD17000089en_US
dc.citation.woscount35en_US
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