标题: A three-parameters-only MOSFET subthreshold current CAD model considering back-gate bias and process variation
作者: Chen, MJ
Ho, JS
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: back-gate bias;CAD model;CMOS analog circuits;mismatch;subthreshold;process variation
公开日期: 1-四月-1997
摘要: In this paper we introduce a new subthreshold conduction CAD model for simulation of VLSI subthreshold CMOS analog circuits and systems, This model explicitly formulates the back-gate bias effect and preserves the original advantages of the existing four-parameter model while reducing the fitting parameter number down to three, A transparent relationship between the fitting parameters and the process parameters has been derived, and its correlation with a recently widely used CAD model as well as with a well-known two-parameter model has been established, Our extensive measurement work on n-channel MOSFET's has highlighted the potential of the model in handling the variations in the subthreshold I-V characteristics at different back-gate biases arising from process variations, The mismatch analysis has further been successfully performed with emphasis on the reverse back-gate bias effect. In summary, the proposed model can serve as a promising alternative in the area of VLSI subthreshold CMOS analog circuit simulation.
URI: http://dx.doi.org/10.1109/43.602471
http://hdl.handle.net/11536/149593
ISSN: 0278-0070
DOI: 10.1109/43.602471
期刊: IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
Volume: 16
起始页: 343
结束页: 352
显示于类别:Articles